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LinearTM Power MOSFET w/Extended FBSOA
IXTB62N50L
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
VDSS = ID25 = ≤RDS(on)
500V 62A 100mΩ
PLUS264TM
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force
Maximum Ratings 500 V
500 V
± 30 V
± 40 V
62 A 150 A
80 A
5J
800 W
-55 ... +150
°C
150 °C
-55 ... +150
°C
300 °C
260 °C
30..120/6.7..27
N/lb.
IXTB62N50L Datasheet
