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IXTB62N50L Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: LinearTM Power MOSFET w/Extended FBSOA IXTB62N50L N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = ≤RDS(on) 500V 62A 100mΩ PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Maximum Ratings 500 V 500 V ± 30 V ± 40 V 62 A 150 A 80 A 5J 800 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 30..120/6.7..27 N/lb.

Key Features

  • z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 20V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.5 V ± 200 nA 50 μA 1 mA 100 mΩ.

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IXTB62N50L Distributor