Datasheet Details
| Part number | IXTN660N04T4 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 172.32 KB |
| Description | Power MOSFET |
| Datasheet |
 IXTN660N04T4 Datasheet
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| Part number | IXTN660N04T4 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 172.32 KB |
| Description | Power MOSFET |
| Datasheet |
IXTN660N04T4 Datasheet
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TrenchT4TM Power MOSFET Advance Technical Information IXTN660N04T4 D VDSS = ID25 = RDS(on) 40V 660A 0.85m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S S miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 50/60 Hz, RMS t = 1 minute IISOL 1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings 40 40 V V 15 V 660 A 200 1800 A A 330 A 5J 1040 W -55 ...
+175 175 -55 ...
+175 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g S G G = Gate S = Source S D D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
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