IXTN600N04T2 Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

IXTN600N04T2 power mosfet by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXTN600N04T2
Manufacturer	IXYS (now Littelfuse)
File Size	196.05 KB
Description	Power MOSFET
Download	IXTN600N04T2 Download (PDF)

Overview

TrenchT2TM GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTN600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.3mΩ miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 40 40 ±20 600 200 1800 200 3 940 -55 ...

+175 175 -55 ...

+175 V V V A A A A J W °C °C °C °C °C V~ V~ Nm/lb.in.

Key Features

z z Mounting Torque Terminal Connection Torque z z z z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 150°C Characteristic Values Min.

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