IXTN660N04T4 - Power MOSFET

Features

International Standard Package.

IXTN660N04T4 Power MOSFET by IXYS - Datasheet Preview — Datasheet preview – IXTN660N04T4

Datasheet Details

Part number	IXTN660N04T4
Manufacturer	IXYS (now Littelfuse)
File Size	172.32 KB
Description	Power MOSFET
Datasheet	IXTN660N04T4 Datasheet
Additional preview pages of the IXTN660N04T4 datasheet.

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Full PDF Text Transcription

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TrenchT4TM Power MOSFET Advance Technical Information IXTN660N04T4 D VDSS = ID25 = RDS(on)  40V 660A 0.85m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S S miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 50/60 Hz, RMS t = 1 minute IISOL  1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings 40 40 V V 15 V 660 A 200 1800 A A 330 A 5J 1040 W -55 ... +175 175 -55 ... +175 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.

Published: Feb 6, 2019 |