IXTN61N50 - (IXTN58N50 / IXTN61N50) Power MOSFET

Features

International standard package Isolation voltage 3000V (RMS) Low RDS (on).

IXTN61N50 (IXTN58N50 / IXTN61N50) Power MOSFET by IXYS - Datasheet Preview — Datasheet preview – IXTN61N50

Datasheet Details

Part number	IXTN61N50
Manufacturer	IXYS (now Littelfuse)
File Size	59.40 KB
Description	(IXTN58N50 / IXTN61N50) Power MOSFET
Datasheet	IXTN61N50 Datasheet
Additional preview pages of the IXTN61N50 datasheet.

📁 Similar Datasheet

IXTN21N100 - High Voltage MegaMOSTMFETs (IXYS Corporation)
IXTA05N100 - Power MOSFET (IXYS Corporation)
IXTA05N100 - N-Channel MOSFET (INCHANGE)
IXTA08N100P - N-Channel MOSFET (INCHANGE)
IXTA08N50D2 - N-Channel MOSFET (IXYS Corporation)
IXTA100N04T2 - N-Channel MOSFET (INCHANGE)
IXTA102N15T - N-Channel MOSFET (INCHANGE)
IXTA10N60P - N-Channel MOSFET (INCHANGE)
IXTA110N055P - PolarHT Power MOSFET (IXYS Corporation)
IXTA110N055P - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS

IXTN600N04T2 - Power MOSFET
IXTN60N50L2 - Power MOSFET
IXTN62N50L - Power MOSFET
IXTN660N04T4 - Power MOSFET
IXTN102N65X2 - Power MOSFET
IXTN120N25 - Power MOSFET
IXTN15N100 - N-Channel Enhancement Mode
IXTN170P10P - Power MOSFET

Full PDF Text Transcription

Click to expand full text

High Current Power MOSFET N-Channel Enhancement Mode VDSS IXTN 58N50 IXTN 61N50 500 V 500 V ID25 RDS(on) 58 A 85 mΩ 61 A 75 mΩ Preliminary Data Symbol V DSS V DGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL 50/60 Hz, RMS t = 1 minute t = 1s Md Mounting torque Terminal connection torque (M4) Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C TC = 25°C Pulse width limited by TJM T C = 25°C -40 ... +150 150 -40 ...

Published: Sep 28, 2013 |