IXTN61N50 Description
RGS = 1.0 MΩ Continuous Transient TC = 25°C TC = 25°C Pulse width limited by TJM T C = 25°C -40 ...
IXTN61N50 Key Features
- International standard package Isolation voltage 3000V (RMS) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell s
- reduced RFI
- Low package inductance (< 10 nH)
- easy to drive and to protect
- Aluminium Nitride Isolation
- increased current ratings