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IXTN60N50L2 - Power MOSFET

Features

  • Designed for linear operation.
  • International standard package.
  • Molding epoxy meets UL94 V-0 flammability classification.
  • miniBLOC with Aluminium nitride isolation.

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Preliminary Technical Information Linear L2TM Power MOSFET N-Channel Enhancement Mode Extended FBSOA IXTN60N50L2 VDSS ID25 RDS(on) = = ≤ 500V 53A 100mΩ miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 500 500 ±30 ±40 53 150 60 3 735 -55 ... +150 150 -55 ... +150 V V V V A A A J W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g S D G = Gate S = Source D = Drain Either source terminal S can be used as the source terminal or the Kelvin source (gate return) terminal. 1.6mm (0.062 in.
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