• Part: IXTP3N100P
  • Manufacturer: IXYS
  • Size: 330.81 KB
Download IXTP3N100P Datasheet PDF
IXTP3N100P page 2
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IXTP3N100P page 3
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IXTP3N100P Description

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTP3N100P IXTH3N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous.

IXTP3N100P Key Features

  • International Standard Packages
  • Low RDS(ON) and QG
  • Avalanche Rated
  • Low Package Inductance
  • High Power Density
  • Easy to Mount
  • Space Savings