* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z miniBLOC, with Aluminium Nitride Isolation z Optimized for Low Conduction and Switching Losses z Isolated Mounting Surface z Anti-Parallel Ultra Fast Diode z 2500V~ Electrical Isolation z Optimized for 10-30kHz Switching z Avalanche Rated z Shor
IXXN200N60B3H1 Datasheet (195.52 KB)
IXXN200N60B3H1
IXYS
195.52 KB
600v igbt.
Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol VC.
📁 Related Datasheet
IXXN200N60B3 Extreme Light Punch Through IGBT (IXYS)
IXXN200N60C3H1 Extreme Light Punch Through IGBT (IXYS)
IXXN200N65A4 Extreme Light Punch Through IGBT (IXYS)
IXXN100N60B3H1 Extreme Light Punch Through IGBT (IXYS)
IXXN340N65B4 650V IGBT (IXYS)
IXXA30N65C3HV 650V IGBTs (IXYS)
IXXA50N60B3 600V IGBTs (IXYS)
IXXH100N60B3 IGBT (IXYS)
IXXH100N60C3 IGBT (IXYS)
IXXH110N65B4 650V IGBT (IXYS)
