* z Optimized for Low Switching Losses z International Standard Package z Square RBSOA z Isolation Voltage 2500V~ z Anti-Parallel Ultra Fast Diode z Optimized for 10-30kHz Switching z Avalanche Rated z Short Circuit Capability z High Current Handling Capability Advantages z High Power Density z Low Ga
IXXN100N60B3H1 Datasheet (217.53 KB)
IXXN100N60B3H1
IXYS
217.53 KB
Extreme light punch through igbt.
XPTTM 600V IGBT GenX3TM w/ Diode IXXN100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC90 IF110 .
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