Overview: 1200V XPTTM IGBT GenX3TM w/ Diode IXYH30N120C3D1 High-Speed IGBT for 20-50 kHz Switching Symbol
VCES V
CGR
VGES VGEM IC25 IC110 IF110 I
CM
IA EAS SSOA (RBSOA)
PC TJ TJM T
stg
TL
Md Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C, R GE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C T = 25°C, 1ms
C
TC = 25°C TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s
Mounting Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 66 A 30 A 20 A 133 A 20 A 400 mJ ICM = 60 A @VCE VCES 416 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 6 Nm/lb.in g Symbol Test Conditions (T J = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V V GE(th) I C = 250A, V CE = V GE I V = V , V = 0V CES CE CES GE T J = 125C IGES VCE = 0V, VGE = 20V V CE(sat) I = 30A, V = 15V, Note 1 C GE T J = 150C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 25 A 350 µA 100 nA 3.3 V 3.7 V VCES = 1200V I = 30A C110 V 3.
