* Optimized for Low Switching Losses
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated
* High Current Handling Capability
* International Standard Package Advantages
* High Power Density
* Low Gate Drive R
IXYH30N120C3D1 Datasheet (1.27 MB)
IXYH30N120C3D1
IXYS
1.27 MB
Igbt.
1200V XPTTM IGBT GenX3TM w/ Diode IXYH30N120C3D1 High-Speed IGBT for 20-50 kHz Switching Symbol VCES V CGR VGES VGEM IC25 IC110 IF110 I CM IA EAS S.
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