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IXYX100N120B3 - IGBT

Download the IXYX100N120B3 datasheet PDF. This datasheet also covers the IXYK100N120B3 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXYK100N120B3-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXYH50N120C3 High-Speed IGBT IXYS Corporation
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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXYX100N120C3 High-Speed IGBT
IXYX100N65B3D1 IGBT
IXYX100N65C3D1 IGBT
IXYX110N120A4 Ultra Low-Vsat PT IGBT
IXYX110N120B4 1200V IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information 1200V XPTTM IGBTs GenX3TM IXYK100N120B3 IXYX100N120B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200V 100A 2.6V 240ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C 225 160 100 530 50 1.2 ICM = 200 ≤@VCE VCES 1150 -55 ... +175 175 -55 ... +175 A A A A A J A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.