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MMIX1F44N100Q3 - Power MOSFET

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG z Isolated Tab D TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C S G G = Gate S = Source D = Drain 1.6mm (0.062 in. ) from Case for 10s Plastic Body.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information HiperFETTM Power MOSFET Q3-Class (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C MMIX1F44N100Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 30A 245mΩ 300ns D G S Maximum Ratings 1000 1000 ±30 ±40 30 110 44 4 50 694 -55 ... +150 150 -55 ... +150 www.DataSheet.net/ V V V V A A A J V/ns W °C °C °C °C °C V~ N/lb.