Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxi.
Advance Technical Information
MMIX1G75N250
VCES =
IC90 = VCE(sat) ≤
2500V 65A 2.9V
( Electrically Isolated Tab)
C
.
High Voltage IGBT
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