z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z High Blocking Voltage z High Peak Current Capability z Lo.

z Switch-Mode and Resonant-Mode Power Supplies z Capacitor Discharge Circuits © 2012 IXYS CORPORATION, All Rights Reser.

Bipolar MOS Transistor

MMIX4B22N300

MMIX4B12N300

MMIX4G20N250

MMIX1F230N20T

MMIX1F44N100Q3

MMIX1G75N250

MMIX1X200N60B3H1

MMIX1Y100N120C3H1

MMIX1Y25N250CV1

MMI-6SF

MMI-810E

MMI-910B

MMI131A

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