MMIX4G20N250 Datasheet, IGBT, IXYS

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MMIX4G20N250 Features and benefits

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Peak Current Capability
* Low Sa.

MMIX4G20N250 Application

( Electrically Isolated Tab) H-Bridge Configuration MMIX4G20N250 C1 G1 E1C3 G3 Q1 Q2 Q3 Q4 C2 G2 E2C4 G4 E3E4 Symbo.

MMIX4G20N250 Description

High Voltage IGBT

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TAGS

IXYS

Manufacturer

IXYS

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