* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Peak Current Capability
* Low Saturation Voltage
* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages
* High Power Density
* Easy t
MMIX4G20N250 Datasheet (1.30 MB)
MMIX4G20N250
IXYS
1.30 MB
High voltage igbt.
High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) H-Bridge Configuration MMIX4G20N250 C1 G1 E1C3 G3 Q1 Q2 Q3 Q4 .
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