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MMIX4B22N300 - Monolithic Bipolar MOS Transistor

Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Datasheet preview – MMIX4B22N300

Datasheet Details

Part number MMIX4B22N300
Manufacturer IXYS (now Littelfuse)
File Size 238.05 KB
Description Monolithic Bipolar MOS Transistor
Datasheet download datasheet MMIX4B22N300 Datasheet
Additional preview pages of the MMIX4B22N300 datasheet.

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Full PDF Text Transcription

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B22N300 C1 C2 (Electrically Isolated Tab) G1 E1C3 G3 G2 E2C4 G4 E3E4 Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 3000 ± 20 ± 30 TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inductive Load VGE = 15V, TJ = 125°C, RG = 52, VCE = 1500V, Non-Repetitive TC = 25°C 38 22 165 ICM = 180 VCES  1500 10 150 -55 ... +150 150 -55 ... +150 Maximum Lead Temperature for Soldering 300 Plastic Body for 10s 260 Mounting Force 50..200 / 11..
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