900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






IXYS Corporation

GWM100-0085X1 Datasheet Preview

GWM100-0085X1 Datasheet

Three phase full Bridge

No Preview Available !

www.DataSheet.co.kr
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM100-0085X1
VDSS = 85 V
ID25 = 103 A
RDSon typ. = 5.5 mW
L+
G3 G5
G1
S3 S5
S1 L1
L2
L3
G2 G4 G6
S2 S4 S6
L-
MOSFETs
Symbol Conditions
VDSS
VGS
TJ = 25°C to 150°C
ID25
ID90
ID110
TC = 25°C
TC = 90°C
TC = 110°C
IF25 TC = 25°C (diode)
IF90 TC = 90°C (diode)
IF110 TC = 110°C (diode)
Maximum Ratings
85 V
± 20 V
103 A
77 A
68 A
tbd A
tbd A
tbd A
Symbol Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R 1)
DSon
VGS(th)
IDSS
IGSS
on chip level at
VGS = 10 V; ID = 75 A
VDS = 20 V; ID = 250 µA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Qg
Qgs VGS = 10 V; VDS = 42 V; ID = 75 A
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
inductive load
VGS = 10 V; VDS = 42 V
ID = 75 A; RG = 39 ;
TJ = 125°C
RthJC
RthJH
with heat transfer paste (IXYS test setup)
1) VDS = ID·(RDS(on) + RPin to )Chip
5.5
12.7
2.0
100
114
30
35
tbd
tbd
tbd
tbd
tbd
tbd
tbd
1.3
6.2 mW
mW
4.0 V
5 µA
µA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307
1-3
Datasheet pdf - http://www.DataSheet4U.net/




IXYS Corporation

GWM100-0085X1 Datasheet Preview

GWM100-0085X1 Datasheet

Three phase full Bridge

No Preview Available !

www.DataSheet.co.kr
GWM100-0085X1
Source-Drain Diode
Symbol Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD (diode) IF = 100 A; VGS = 0 V
trr
QRM
IRM
IF = 100 A; -diF/dt = 800 A/µs; VR = 24 V
TVJ = 125°C
0.9 1.2
V
tbd ns
tbd µC
tbd A
Component
Symbol Conditions
IRMS per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
TJ
Tstg
VISOL
FC
IISOL < 1 mA, 50/60 Hz, f = 1 minute
mounting force with clip
Maximum Ratings
300 A
-55...+175
-55...+125
1000
50 - 250
°C
°C
V~
N
Symbol Conditions
R 1)
pin to chip
CP
L+ to L1/L2/L3 or L- to L1/L2/L3
coupling capacity between shorted
pins and mounting tab in the case
Weight
1) VDS = ID·(RDS(on) + RPin to )Chip
Characteristic Values
min. typ. max.
1.0 mW
160 pF
25 g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307
2-3
Datasheet pdf - http://www.DataSheet4U.net/


Part Number GWM100-0085X1
Description Three phase full Bridge
Maker IXYS Corporation
PDF Download

GWM100-0085X1 Datasheet PDF





Similar Datasheet

1 GWM100-0085X1 Three phase full Bridge
IXYS Corporation





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy