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IXYS Corporation

GWM100-01X1 Datasheet Preview

GWM100-01X1 Datasheet

Three phase full Bridge

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www.DataSheet.co.kr
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM 100-01X1
VDSS = 100 V
ID25 = 90 A
RDSon typ. = 7.5 mW
L+
G3 G5
G1
S3 S5
S1 L1
L2
L3
G2 G4 G6
S2 S4 S6
L-
MOSFETs
Symbol Conditions
VDSS
VGS
TJ = 25°C to 150°C
ID25 TC = 25°C
ID90 TC = 90°C
IF25 TC = 25°C (diode)
IF90 TC = 90°C (diode)
Maximum Ratings
100 V
± 20 V
90 A
68 A
90 A
68 A
Symbol Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R 1)
DSon
VGS(th)
IDSS
IGSS
on chip level at
VGS = 10 V; ID = 80 A
VDS = 20 V; ID = 250 µA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Qg
Qgs VGS = 10 V; VDS = 65 V; ID = 90 A
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
inductive load
VGS = 10 V; VDS = 48 V
ID = 70 A; RG = 33 ;
TJ = 125°C
RthJC
RthJH
with heat transfer paste (IXYS test setup)
1) VDS = ID·(RDS(on) + 2RPin to )Chip
7.5
14
2.5
0.1
90
30
30
130
95
290
55
0.4
0.4
0.007
1.3
8.5 mW
mW
4.5 V
1 µA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead frames available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307e
1-6
Datasheet pdf - http://www.DataSheet4U.net/




IXYS Corporation

GWM100-01X1 Datasheet Preview

GWM100-01X1 Datasheet

Three phase full Bridge

No Preview Available !

www.DataSheet.co.kr
Source-Drain Diode
Symbol Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD (diode) IF = 70 A; VGS = 0 V
trr
QRM IF = 70 A; -diF/dt = 800 A/µs; VR = 48 V
IRM
0.9 1.2
V
55 ns
0.95 µC
33 A
Component
Symbol Conditions
IRMS per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
TJ
Tstg
VISOL
FC
IISOL < 1 mA, 50/60 Hz, f = 1 minute
mounting force with clip
Maximum Ratings
300 A
-55...+175
-55...+125
1000
50 - 250
°C
°C
V~
N
Symbol Conditions
R 1)
pin to chip
CP
coupling capacity between shorted
pins and mounting tab in the case
Weight
1) VDS = ID·(RDS(on) + 2RPin to )Chip
Characteristic Values
min. typ. max.
0.6 mW
160 pF
25 g
GWM 100-01X1
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307e
2-6
Datasheet pdf - http://www.DataSheet4U.net/


Part Number GWM100-01X1
Description Three phase full Bridge
Maker IXYS Corporation
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