GWM100-01X1 Datasheet | IXYS

Features - MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode - package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer - Space and weight savings Package options - 2 lead frames available - straight leads (SL) - SMD lead version (SMD) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. 7.5 14 2.5 TJ = 25°C TJ = 125°C 0.1 0.2 90 30 30 130 95 290 55 0.4 0.4 0.007 1.3 1.0 1.6 max. 8.5 4.5 1 m W m W V µA m A µA n C n C n C ns ns ns ns m J m J m J K/W K/W RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff Rth JC Rth JH 1) 1) on chip level at ; ID = 80 A VGS = 10 V VDS = 20 V; ID = 250 µA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V; VDS = 65 V; ID = 90 A inductive load VGS = 10 V; VDS = 48 V ID = 70 A; RG = 33 Ω; TJ = 125°C with heat transfer paste (IXYS test setup) VDS = ID- (RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. 20110307e © 2011 IXYS All rights reserved 1-6 Datasheet pdf - http://..net/ .Data Sheet.co.kr GWM 100-01X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. VSD trr QRM IRM (diode) IF = 70 A; VGS = 0 V IF = 70 A; -di F/dt = 800 A/µs; VR = 48 V typ. 0.9 55 0.95 33 max. 1.2 V ns µC A ponent Symbol IRMS TJ Tstg VISOL FC Symbol Rpin to chip 1) IISOL < 1 m A, 50/60 Hz, f = 1 minute mounting force with clip Conditions Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections Maximum Ratings 300 -55...+175 -55...+125 1000 50 - 250 A °C °C V~ N Characteristic Values min. typ. 0.6 160 25 max. m W Weight 1) coupling capacity between shorted pins and mounting tab in the case p F g VDS = ID- (RDS(on)...