GWM100-01X1
Overview
- MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
- package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer
- Space and weight savings Package options
- 2 lead frames available - straight leads (SL) - SMD lead version (SMD) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. 7.5 14 2.5 TJ = 25°C TJ = 125°C 0.1 0.2 90 30 30 130 95 290 55 0.4 0.4 0.007 1.3 1.0 1.6 max. 8.5 4.5 1 mW mW V µA mA µA nC nC nC ns ns ns ns mJ mJ mJ K/W K/W RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) 1) on chip level at ; ID = 80 A VGS = 10 V VDS = 20 V; ID = 250 µA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V; VDS = 65 V; ID = 90 A inductive load VGS = 10 V; VDS = 48 V ID = 70 A; RG = 33 Ω; TJ = 125°C with heat transfer paste (IXYS test setup) VDS = ID
- (RDS(on) + 2RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. 20110307e © 2011 IXYS All rights reserved 1-6 Datasheet pdf -
