Datasheet Details
| Part number | IXBH42N170 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 177.41 KB |
| Description | Monolithic Bipolar MOS Transistor |
| Download | IXBH42N170 Download (PDF) |
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| Part number | IXBH42N170 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 177.41 KB |
| Description | Monolithic Bipolar MOS Transistor |
| Download | IXBH42N170 Download (PDF) |
|
|
|
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol VCES VCGR VGES VGEM IC25 ILRMS IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C Terminal Current Limit TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 1700 1700 V V ± 20 ± 30 V V 80 A 75 A 42 A 300 A ICM = 100 VCES ≤ 1350 360 A V W -55 ...
+150 150 -55 ...
+150 °C °C °C 300 260 1.13/10 °C °C Nm/lb.in.
| Part Number | Description |
|---|---|
| IXBH42N170A | Monolithic Bipolar MOS Transistor |
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| IXBH9N160G | Monolithic Bipolar MOS Transistor |
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