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IXBH15N160 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

This page provides the datasheet information for the IXBH15N160, a member of the IXBH15N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor family.

Datasheet Summary

Features

  • International standard package JEDEC TO-247 AD.
  • High Voltage.

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Datasheet Details

Part number IXBH15N160
Manufacturer IXYS Corporation
File Size 97.14 KB
Description High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
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www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5.8 V typ. 40 ns G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms Maximum Ratings 15N140 15N160 1400 1400 1600 1600 ±20 ±30 15 9 18 ICM = 18 150 -55 ... +150 150 -55 ...
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