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IXBH15N160 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

Download the IXBH15N160 datasheet PDF. This datasheet also covers the IXBH15N140 variant, as both devices belong to the same high voltage bimosfet monolithic bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard package JEDEC TO-247 AD.
  • High Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBH15N140_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXBH15N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH10N170 Bipolar MOS Transistor
IXBH16N170A Bipolar MOS Transistor
IXBH40N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH42N170 Monolithic Bipolar MOS Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5.8 V typ. 40 ns G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms Maximum Ratings 15N140 15N160 1400 1400 1600 1600 ±20 ±30 15 9 18 ICM = 18 150 -55 ... +150 150 -55 ...