IXBH15N160 Overview
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5.8 V typ. 40 ns G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A A W °C °C...
IXBH15N160 Key Features
- International standard package JEDEC TO-247 AD
- High Voltage BIMOSFETTM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
- Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
- MOS Gate turn-on
- drive simplicity
- Reverse conducting capability