Overview: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol
VCES VCGR
VGES VGEM
IC25 ILRMS IC90 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TTLSOLD Md
Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C Terminal Current Limit TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings 1700 1700 V V ± 20 ± 30 V V 80 A 75 A 42 A 300 A ICM = 100 VCES ≤ 1350
360 A V W -55 ... +150 150
-55 ... +150 °C °C °C 300 260
1.13/10 °C °C
Nm/lb.in. 6g 4g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES
IGES VCE(sat) VCE = 0.8 • VCES VGE = 0V VCE = 0V, VGE = ± 20V IC = 42A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 1700 V 2.5 5.5 V TJ = 125°C 50 μA 1.5 mA
±100 nA TJ = 125°C 2.8 V 2.
