IXBH42N170A
IXBH42N170A is Monolithic Bipolar MOS Transistor manufactured by IXYS.
Preliminary Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBT42N170A IXBH42N170A
VCES =
IC90 =
VCE(sat) tfi
≤ =
1700V
21A
6.0V 20ns
Symbol
VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA)
T(SSCC SOA)
PC TJ TJM Tstg TTLSOLD Md Weight
Test Conditions
TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous
Transient
TC = 25°C
TTCC
= =
90°C 25°C,
1ms
VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load
VRGGE==1105ΩV, ,n Von CEr Se=p1e2ti0tiv0e V, TJ = 125°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268 TO-247
Maximum Ratings
1700 1700
± 20 V ± 30...
