Overview: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE(sat) tfi ≤ = 1700V
21A
6.0V 20ns Symbol
VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA)
T(SSCC SOA)
PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous
Transient TC = 25°C TTCC = = 90°C 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load VRGGE==1105ΩV, ,nVonCErSe=p1e2ti0tiv0eV, TJ = 125°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268 TO-247 Maximum Ratings 1700 1700 V V ± 20 V ± 30 V 42 A 21 A 265 A ICM = 84 1360 A V 10
357
-55 ... +150 150
-55 ... +150
300 260
1.13/10
4 6 µs
W
°C °C °C
°C °C
Nm/lb.in.
g g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250µA, VGE = 0V VGE(th) IC = 750µA, VCE = VGE ICES VCE = 0.8 • VCES, VGE = 0V IGES VCE(sat) VCE = 0V, VGE = ± 20V IC = IC90, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 1700 2.5 5.5 V V TJ = 125°C 50 µA 1.5 mA ±100 nA 5.2 6.0 V TJ = 125°C 5.
