IXBH40N140 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

IXYS (now Littelfuse)

Key Features

International standard package JEDEC TO-247 AD.
High Voltage.

IXBH40N140 high voltage bimosfet monolithic bipolar mos transistor by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXBH40N140
Manufacturer	IXYS (now Littelfuse)
File Size	89.90 KB
Description	High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
Datasheet	IXBH40N140 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 40N140 IXBH 40N160 VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms Maximum Ratings 40N140 40N160 1400 1400 1600 1600 ±20 ±30 33 20 40 ICM = 40 350 -55 ... +150 150 -55 ...