IXBH40N140
IXBH40N140 is High Voltage BIMOSFET Monolithic Bipolar MOS Transistor manufactured by IXYS.
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High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode
IXBH 40N140 IXBH 40N160
VCES IC25 VCE(sat) tfi
TO-247 AD
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1400/1600 V 33 A 6.2 V typ. 40 ns
G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector
C (TAB)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms
Maximum Ratings 40N140 40N160 1400 1400 1600 1600 ±20 ±30 33 20 40 ICM = 40 350 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C
Features
- International standard package JEDEC TO-247 AD
- High Voltage BIMOSFETTM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
- Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
- MOS Gate turn-on
- drive simplicity
- Intrinsic diode Applications
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- AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
- CRT deflection
- Lamp ballasts Advantages
VGE = 15 V, TVJ = 125°C, RG = 22 W VCE = 0.8- VCES Clamped inductive load, L = 100 m H TC =...
