IXBH10N170
IXBH10N170 is Bipolar MOS Transistor manufactured by IXYS.
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High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
IXBH 10N170 IXBT 10N170
VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V
Preliminary Data Sheet
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load TC = 25°C
Maximum Ratings 1700 1700 ±20 ±30 20 10 40 ICM = 20 V CES = 1350 140 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V W °C °C °C °C °C
TO-268 (IXBT)
G E (TAB)
TO-247 AD (IXBH)
C (TAB) C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features z z
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268
1.13/10Nm/lb.in. 6 4 g g z z z
High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High current handling capability MOS Gate turn-on
- drive simplicity Molding epoxies meet UL 94 V-0 flammability classification z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 0.10 3.0
- 0.24 TJ = 25°C TJ = 125°C V %/K 5.0 V %/K 10 100 ±100 TJ = 125°C 3.4 4.1 3.8 µA µA n A V V
Applications z z z
BVCES VGE(th) ICES IGES VCE(sat)
IC = 250 µA, VGE = 0 V Temperature Coefficent IC = 250 µA, VCE = VGE Temperature Coefficent VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V z
AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Capacitor discharge circuits
Advantages z z z
High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole)
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