IXBT10N170 transistor equivalent, high voltage/ high gain bimosfettm monolithic bipolar mos transistor.
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Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3.
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BVCES VGE(th) ICES IGES VCE(sat)
IC = 250 µA, VGE = 0 V Temperature Coefficent IC = 250 µA, VCE = VGE Temperatur.
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