IXBT16N170A Datasheet (IXYS Corporation)

IXBT16N170A - Bipolar MOS Transistor

Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 6.0 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 33

IXBT16N170A Features

* Monolithic fast reverse diode

* High Blocking Voltage

* JEDEC TO-268 surface mount and JEDEC TO-247 AD packages

* Low switching losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Molding epoxies meet UL 94 V-0 f

IXBT16N170A Datasheet - IXYS Corporation

IXBT16N170A - Bipolar MOS Transistor

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