* NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode
* Epoxy meets UL 94V-0
* Iso
IXDR30N120 Datasheet (144.27 KB)
IXDR30N120
IXYS Corporation
144.27 KB
High voltage igbt.
High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability C Square RBSOA G E IXDR 30.
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