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IXEH40N120 Datasheet NPT3 IGBT

Manufacturer: IXYS (now Littelfuse)

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Overview

IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ.

C TO-247 AD G G C E C (TAB) E G = Gate, C = Collector, E = Emitter, TAB = Collector IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) VGE(th) I CES IGES QGon Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings ±1200 V ± 20 V 55 A 35 A 80 A 600 V 300 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.

typ.

Key Features

  • IGBT with NPT (non punch through) structure.
  • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery.
  • positive temperature coefficient of saturation voltage.
  • Epoxy of TO-247 package meets UL 94V-0.

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