* z z z G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages z z z Plus 264TM Package for Clip or Spring Mounting Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(
IXFB52N90P Datasheet (139.44 KB)
IXFB52N90P
IXYS Corporation
139.44 KB
Polar power mosfet hiperfet.
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB52N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 52A.
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