* Low Intrinsic Gate Resistance
* Low Package Inductance
* Avalanche Rated
* Fast Intrinsic Rectifier
* Low RDS(on) and QG Advantages
* High Power Density
* Easy to Mount
* Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V
IXFB62N80Q3 Datasheet (659.69 KB)
IXFB62N80Q3
IXYS Corporation
659.69 KB
Power mosfet.
Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFB62N80Q3 D G S Symbol VDSS VDGR VGSS VGSM ID.
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