IXFB62N80Q3 Key Features
- Low Intrinsic Gate Resistance
- Low Package Inductance
- Avalanche Rated
- Fast Intrinsic Rectifier
- Low RDS(on) and QG
- High Power Density
- Easy to Mount
- Space Savings
- VDSS, VGS = 0V
- ID25, Note 1
- Part: IXFB62N80Q3
- Manufacturer: IXYS (official site)
- Size: 659.69 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFB60N80P | Power MOSFET |
| IXFB100N50P | Power MOSFET |
| IXFB100N50Q3 | HiperFET Power MOSFET Q3-Class |
| IXFB110N60P3 | Power MOSFET |
| IXFB120N50P2 | PolarP2 HiPerFET Power MOSFET |
IXFB62N80Q3 Description
+150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force 30..120/6.7..27 N/lb. 10 g VDSS = ID25 = RDS(on) trr 800V 62A 140m 300ns PLUS264TM G D S Tab G = Gate D = Drain S = Source Tab = Drain.