* Internationalstandardpackages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic rectifier Symbol V DSS V GS(th
IXFK150N15 Datasheet (112.65 KB)
IXFK150N15
IXYS Corporation
112.65 KB
Power mosfet.
HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFK 150N15 IXFX 150N15 VDSS = 150 V ID25 = 150 A = RDS(on) 12.5 mW trr £ 250 ns .
📁 Related Datasheet
IXFK150N15P Power MOSFET (IXYS Corporation)
IXFK15N100Q HiPerFET Power MOSFETs (IXYS Corporation)
IXFK100N10 Power MOSFET (IXYS Corporation)
IXFK100N25 Power MOSFET (IXYS Corporation)
IXFK100N65X2 Power MOSFET (IXYS)
IXFK102N30P Polar MOSFETs (IXYS Corporation)
IXFK105N07 HiPerFET Power MOSFETs (IXYS Corporation)
IXFK110N06 HiPerFET Power MOSFETs (IXYS Corporation)
IXFK110N07 HiPerFET Power MOSFETs (IXYS Corporation)
IXFK120N20 Power MOSFET (IXYS)
