* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect
* Fast intrinsic Rectifier Applications
IXFM7N80 Datasheet (137.05 KB)
IXFM7N80
IXYS Corporation
137.05 KB
Power mosfet.
www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (c.
📁 Related Datasheet
IXFM75N10 Power MOSFET (IXYS Corporation)
IXFM10N100 Power MOSFET (IXYS Corporation)
IXFM10N90 Power MOSFET (ETC)
IXFM10N90 Power MOSFETs (IXYS)
IXFM11N80 Power MOSFET (IXYS Corporation)
IXFM12N100 Power MOSFET (IXYS Corporation)
IXFM12N90 Power MOSFET (ETC)
IXFM12N90 Power MOSFETs (IXYS)
IXFM13N50 Power MOSFET (IXYS Corporation)
IXFM13N80 Power MOSFET (IXYS Corporation)
