IXFM7N80 Overview
+150 V V V V A A A mJ V/ns TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) D G W °C °C °C °C Nm/lb.in. G = Gate, S = Source, D = Drain, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 TO-204 = 18 g, TO-247 = 6.
IXFM7N80 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier