IXFM7N80 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier
- Part: IXFM7N80
- Manufacturer: IXYS (official site)
- Size: 137.05 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFM75N10 | Power MOSFET |
| IXFM10N100 | Power MOSFET |
| IXFM11N80 | Power MOSFET |
| IXFM12N100 | Power MOSFET |
| IXFM13N50 | Power MOSFET |
IXFM7N80 Description
+150 V V V V A A A mJ V/ns TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) D G W °C °C °C °C Nm/lb.in. G = Gate, S = Source, D = Drain, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 TO-204 = 18 g, TO-247 = 6.