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IXYS Corporation

IXFR50N50 Datasheet Preview

IXFR50N50 Datasheet

Power MOSFETs

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HiPerFETTM Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Back Surface)
Single Die MOSFET
IXFR 50N50
IXFR 55N50
VDSS
ID25
500 V 43 A
500 V 48 A
trr 250 ns
RDS(on)
100 m
90 m
Symbol
VDSS
V
DGR
VGS
V
GSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Weight
Symbol
VDSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
50N50
55N50
50N50
55N50
50N50
55N50
500
500
±20
±30
43
48
200
220
50
55
60
3
5
400
-40 ... +150
150
-40 ... +150
300
2500
5
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
g
Test Conditions
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
2.5 4.5 V
±200 nA
TJ = 25°C
TJ = 125°C
50N50
55N50
25 µA
2 mA
100 m
90 m
ISOPLUS 247TM
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Low drain to tab capacitance(<50pF)
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Unclamped Inductive Switching (UIS)
rated
l Fast intrinsic Rectifier
Applications
l DC-DC converters
l Battery chargers
l Switched-mode and resonant-mode
power supplies
l DC choppers
l AC motor control
Advantages
l Easy assembly
l Space savings
l High power density
© 2002 IXYS All rights reserved
98588B (04/02)




IXYS Corporation

IXFR50N50 Datasheet Preview

IXFR50N50 Datasheet

Power MOSFETs

No Preview Available !

Symbol
gfs
C
iss
Coss
C
rss
t
d(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = IT
Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 1 (External),
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
45 S
9400
1280
460
pF
pF
pF
45 ns
60 ns
120 ns
45 ns
330 nC
55 nC
155 nC
0.30 K/W
0.15
K/W
IXFR 50N50
IXFR 55N50
ISOPLUS 247 OUTLINE
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
55N50
50N50
ISM Repetitive;
55N50
pulse width limited by TJM
50N50
V
SD
IF = IS, VGS = 0 V
t
rr
QRM IF = 25A,-di/dt = 100 A/µs, VR = 100 V
IRM
55 A
50 A
220 A
200 A
1.5 V
250 ns
1.0 µ C
10 A
See IXFK55N50 data sheet for
characteristic curves.
Note: 1. Pulse test, t 300 µs, duty cycle d 2 %
2. IT test current: 50N50 IT = 25A
55N50 IT = 27.5A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025


Part Number IXFR50N50
Description Power MOSFETs
Maker IXYS Corporation
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IXFR50N50 Datasheet PDF






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