IXFR55N50F Description
HiPerRFTM Power MOSFETs F-Class: +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM E153432 Isolated backside G = Gate D = Drain S = Source TAB = Electrically Isolated.
IXFR55N50F Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z RF capable Mosfets
- easier to drive -faster switching z Low drain to tab capacitance(<30pF)