IXFR55N50F Datasheet | IXYS

Hi Per RFTM Power MOSFETs F-Class: Mega Hertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High d V/dt, Low trr IXFR 55N50F VDSS = 500 V ID25 = 55 A RDS(on) = 90 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 45 220 55 60 3.0 10 400 -40 ... +150 150 -40 ... +150 V V V V A A A m J J V/ns W °C °C °C °C V~ g ISOPLUS 247TM E153432 Isolated backside- G = Gate D = Drain S = Source TAB = Electrically Isolated Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z RF capable Mosfets z z Low gate charge and capacitances - easier to drive -faster switching z Low drain to tab capacitance(<30p F) z z z 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) z Fast intrinsic Rectifier Applications z DC-DC converters z z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 3.0 V 5.5 V ±200 n A TJ = 25°C TJ = 125°C 100 µA 3 m A 90 mΩ Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1m A VDS = VGS, ID = 8m A VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3 Advantages z Easy assembly z z Space savings High power density © 2004 IXYS All rights reserved DS98814C(06/04)...