Overview: HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
Single Die MOSFET IXFR 50N50 IXFR 55N50 VDSS ID25 500 V 43 A 500 V 48 A trr ≤ 250 ns RDS(on)
100 mΩ 90 mΩ Symbol
VDSS V
DGR
VGS V
GSM
ID25 IDM IAR
EAR EAS dv/dt
PD TJ TJM Tstg TL VISOL Weight
Symbol
VDSS VGS(th) I
GSS
IDSS
RDS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 50N50 55N50 50N50 55N50 50N50 55N50 500 500
±20 ±30
43 48 200 220 50 55
60
3
5 400
-40 ... +150 150
-40 ... +150
300
2500
5 V V
V V
A A A A A A
mJ
J
V/ns
W
°C °C °C
°C
V~
g Test Conditions
VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0
VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
2.5 4.
