IXFR58N20Q Description
+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM E153432 G D Isolated back surface G = Gate S = Source D = Drain Patent pending.
IXFR58N20Q Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<50pF) IXYS advanced low Qg process Rugged polysilicon gate cell