IXFR55N50 Description
HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET IXFR 50N50 IXFR 55N50 VDSS ID25 500 V 43 A 500 V 48 A trr ≤ 250 ns RDS(on) 100 mΩ 90 mΩ Symbol VDSS V DGR VGS V GSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL.
IXFR55N50 Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation