IXFR55N50F mosfet equivalent, hiperrf power mosfet.
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z RF capable Mosfets
z z
Low gate charge a.
z DC-DC converters
z z z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. .
Image gallery
Download