* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z RF capable Mosfets z z Low gate charge and capacitances - easier to drive -faster switching z Low drain to tab capacitance(
IXFR55N50F Datasheet (499.75 KB)
IXFR55N50F
IXYS Corporation
499.75 KB
Hiperrf power mosfet.
HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFR 55.
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