• Part: IXFR58N20Q
  • Description: HiPerFET Power MOSFETs
  • Manufacturer: IXYS
  • Size: 111.86 KB
Download IXFR58N20Q Datasheet PDF
IXFR58N20Q datasheet preview
IXFR58N20Q page 2
Page 2

IXFR58N20Q Key Features

  • High power dissipation
  • Isolated mounting surface
  • 2500V electrical isolation Low drain to tab capacitance(<50pF) IXYS advanced low Qg process Rugged polysilicon gate cell

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