* z 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 250 2500 5 z z z z Weight z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(
IXFR58N20Q Datasheet (111.86 KB)
IXFR58N20Q
IXYS Corporation
111.86 KB
Hiperfet power mosfets.
HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt .
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