Overview: Polar2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH52N50P2 IXFT52N50P2 VDSS = ID25 =
RDS(on) ≤ 500V 52A 120mΩ TO-247 (IXFH) Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold
Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 500 V 500 V ± 30 V ± 40 V 52 A 150 A 52 A 1.5 J 15 V/ns 960 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13 / 10
6 4 Nm/lb.in.
g g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 2.5 4.5 V ±100 nA 15 μA 1.
