IXGH24N60AU1S Description
V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg Test Conditions TJ = 25°C to 150° C TJ = 25°C to 150°.
IXGH24N60AU1S Key Features
- for minimum on-state conduction losses MOS Gate turn-on
- drive simplicity Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM