* International standard packages JEDEC TO-247 and surface mountable TO-268
* High current handling capability
* Latest generation HDMOSTM process
* MOS Gate turn-on - drive simplicity Applications Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case f
IXGH32N60C Datasheet (117.18 KB)
IXGH32N60C
IXYS Corporation
117.18 KB
Igbt.
www.DataSheet4U.com HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE(sat)typ tfi typ = 600 V = 60 A = 2.1 V = 55 ns Sym.
📁 Related Datasheet
IXGH32N60A HiPerFAST IGBT (IXYS Corporation)
IXGH32N60AS HiPerFAST IGBT (IXYS Corporation)
IXGH32N60AU1 HiPerFAST IGBT (IXYS Corporation)
IXGH32N60AU1S HiPerFAST IGBT (IXYS Corporation)
IXGH32N60B HiPerFAST IGBT (IXYS Corporation)
IXGH32N60BD1 HiPerFAST IGBT (IXYS Corporation)
IXGH32N60BU1 HiPerFAST IGBT (IXYS Corporation)
IXGH32N120A3 Ultra-Low Vsat PT IGBT (IXYS)
IXGH32N170 High Voltage IGBT (IXYS Corporation)
IXGH32N170A High Voltage IGBT (IXYS)
