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IXGH32N60C Datasheet - IXYS Corporation

IXGH32N60C IGBT

www.DataSheet4U.com HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE(sat)typ tfi typ = 600 V = 60 A = 2.1 V = 55 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 +150 1.

IXGH32N60C Features

* International standard packages JEDEC TO-247 and surface mountable TO-268

* High current handling capability

* Latest generation HDMOSTM process

* MOS Gate turn-on - drive simplicity Applications Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case f

IXGH32N60C_IXYSCorporation.pdf