IXGN50N60B Key Features
- International standard package SOT-227B
- Aluminium nitride isolation
- high power dissipation
- Isolation voltage 3000 V~
- Very high current, fast switching IGBT
- Low VCE(sat) for minimum on-state conduction losses
- MOS Gate turn-on drive simplicity
- Low collector-to-case capacitance (< 50 pF)
- Low package inductance (< 5 nH)
- easy to drive and to protect