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IXGN50N60B - HiPerFASTTM IGBT

Key Features

  • International standard package SOT-227B.
  • Aluminium nitride isolation - high power dissipation.
  • Isolation voltage 3000 V~.
  • Very high current, fast switching IGBT.
  • Low VCE(sat) for minimum on-state conduction losses.
  • MOS Gate turn-on drive simplicity.
  • Low collector-to-case capacitance (< 50 pF).
  • Low package inductance (< 5 nH) - easy to drive and to protect.

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Other Datasheets by IXYS (now Littelfuse)

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IXGN50N60BD2 HiPerFAST IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.5 V Preliminary data sheet E www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 250 -55 ... +150 150 -55 ...