IXGN50N60BD2 - HiPerFAST IGBT

Features

International standard package miniBLOC.
Aluminium nitride isolation - high power dissipation.
Isolation voltage 3000 V~.
Very high current, fast switching IGBT & FRED diode.
MOS Gate turn-on - drive simplicity.
Low collector-to-case capacitance.
Low package inductance (< 10 nH) - easy to drive and to protect.
Molding epoxies meet UL 94 V-0 flammability classification.

IXYS Corporation

Datasheet Details

Part number	IXGN50N60BD2
Manufacturer	IXYS Corporation
File Size	152.97 KB
Description	HiPerFAST IGBT
Datasheet	IXGN50N60BD2 Datasheet
Additional preview pages of the IXGN50N60BD2 datasheet.

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Full PDF Text Transcription

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HiPerFASTTM IGBT with HiPerFRED Buck & boost configurations IXGN 50N60BD2 IXGN 50N60BD3 VCES IC25 VCE(sat) tfi = 600 V = 75 A = 2.5 V = 150 ns ...BD2 www.DataSheet4U.com Symbol ...BD3 Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 250 600 60 600 150 -40 ... +150 150 -40 ...

Published: Jul 18, 2008 |