IXGN50N60B Description
HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.5 V Preliminary data sheet E .. Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A A W °C °C °C SOT-227B miniBLOC Ex G Ex C G = Gate, C = Collector, E = Emitter x Either emitter terminal can be used as Main or Kelvin Emitter.
IXGN50N60B Key Features
- International standard package SOT-227B
- Aluminium nitride isolation
- high power dissipation
- Isolation voltage 3000 V~
- Very high current, fast switching IGBT
- Low VCE(sat) for minimum on-state conduction losses
- MOS Gate turn-on drive simplicity
- Low collector-to-case capacitance (< 50 pF)
- Low package inductance (< 5 nH)
- easy to drive and to protect