IXGN50N60B - HiPerFASTTM IGBT

Features

International standard package SOT-227B.
Aluminium nitride isolation - high power dissipation.
Isolation voltage 3000 V~.
Very high current, fast switching IGBT.
Low VCE(sat) for minimum on-state conduction losses.
MOS Gate turn-on drive simplicity.
Low collector-to-case capacitance (< 50 pF).
Low package inductance (< 5 nH) - easy to drive and to protect.

IXYS Corporation

Datasheet Details

Part number	IXGN50N60B
Manufacturer	IXYS Corporation
File Size	125.74 KB
Description	HiPerFASTTM IGBT
Datasheet	IXGN50N60B Datasheet
Additional preview pages of the IXGN50N60B datasheet.

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Full PDF Text Transcription

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HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.5 V Preliminary data sheet E www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 250 -55 ... +150 150 -55 ...

Published: Jul 18, 2008 |