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IXGN50N60B - HiPerFASTTM IGBT

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IXYS Corporation

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IXGN50N60B HiPerFASTTM IGBT by IXYS Corporation - Datasheet Preview — Datasheet preview – IXGN50N60B

Datasheet Details

Part number	IXGN50N60B
Manufacturer	IXYS Corporation
File Size	125.74 KB
Description	HiPerFASTTM IGBT
Datasheet	IXGN50N60B Datasheet
Additional preview pages of the IXGN50N60B datasheet.

Product details

Features

International standard package SOT-227B.
Aluminium nitride isolation - high power dissipation.
Isolation voltage 3000 V~.
Very high current, fast switching IGBT.
Low VCE(sat) for minimum on-state conduction losses.
MOS Gate turn-on drive simplicity.
Low collector-to-case capacitance (< 50 pF).
Low package inductance (< 5 nH) - easy to drive and to protect.

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Published: Jul 18, 2008 |