IXGN50N60BD3 Description
+150 V V V V 4 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; 4 = Diode cathode 3 SSOA VGE= 15 V, TVJ = 125°C, RG = 10 W (RBSOA) Clamped inductive load, L = 30 mH PC VRRM Diode TC = 25°C TC = 70°C; rectangular, d = 50% tP z<10 ms;.
IXGN50N60BD3 Key Features
- International standard package miniBLOC
- Aluminium nitride isolation
- high power dissipation
- Isolation voltage 3000 V~
- Very high current, fast switching IGBT & FRED diode
- MOS Gate turn-on
- drive simplicity
- Low collector-to-case capacitance
- Low package inductance (< 10 nH)
- easy to drive and to protect