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IXKF40N60SCD1 - CoolMOS Power MOSFET

Features

  • fast CoolMOS™ 1) power MOSFET 3rd generation - high blocking voltage - low on resistance - low thermal resistance due to reduced chip thickness.
  • Series Schottky diode prevents current flow through MOSFET’s body diode - very low forward voltage - fast switching.
  • Ultra fast HiPerFRED™ anti parallel diode - low operating forward voltage - fast and soft reverse recovery - low switching losses.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXKF 40N60SCD1 CoolMOS™ 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ 5 Preliminary data DS DF 1T 2 VDSS = 600 V ID25 = 41 A R DS(on) typ. = 60 mΩ trr = 70 ns ISOPLUS i4-PAC™ 1 2 5 E72873 MOSFET T Symbol Conditions VDSS VGS ID25 ID90 TVJ = 25°C to 150°C TC = 25°C TC = 90°C Maximum Ratings 600 V ± 20 V 41 A 29 A Symbol RDSon VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec(off) RthJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.
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