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ADVANCE TECHNICAL INFORMATION
CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET
VDSS = 800 V ID25 = 25 A RDS(on) = 150 mΩ
Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C TC = 90°C Package lead current limit Io Io = 10A, TC = 25°C = 20A
Maximum Ratings 800 ±20 25 9 45 690 0.5 6 250 -55 ... +150 150 -55 ...
IXKG25N80C Datasheet
