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IXKF 40N60SCD1
CoolMOS™ 1) Power MOSFET
with Series Schottky Diode and Ultra Fast Antiparallel Diode
in High Voltage ISOPLUS i4-PAC™
5
Preliminary data
DS DF
1T
2
VDSS = 600 V ID25 = 41 A R DS(on) typ. = 60 mΩ trr = 70 ns
ISOPLUS i4-PAC™
1 2 5
E72873
MOSFET T
Symbol Conditions
VDSS VGS ID25 ID90
TVJ = 25°C to 150°C TC = 25°C TC = 90°C
Maximum Ratings
600 V
± 20
V
41 A 29 A
Symbol
RDSon
VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec(off) RthJC RthJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IXKF40N60SCD1 Datasheet
