Datasheet4U Logo Datasheet4U.com

IXKN40N60C - CoolMOS Power MOSFET

Features

  • q 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Easy screw assembly Fast CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density q MOSFET Symbol.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS 600 V ID25 40 A RDS(on) 70 mW Symbol VDSS VGS ID25 ID90 EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Conditions TJ = 25°C to 150°C Maximum Ratings 600 ±20 V V miniBLOC, SOT-227 B E72873 S G TC = 25°C TC = 90°C ID = 20 A, L = 5 µH, TVJ = 25°C, repetitive ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive VDS £ VDSS, IS = 47 A, diS/dt = 100 A/µs, TJ = TJM TC = 25°C 40 27 1 1.8 6 290 -40 ... +150 150 -40 ... +150 A A mJ J D S V/ns W °C °C °C V~ G = Gate S = Source D = Drain Either source terminal at miniBLOC can be used as main or kelvin source 50/60 Hz, RMS IISOL £ 1 mA Mounting torque Terminal connetion torque (M4) 2500 Features q 1.
Published: |