Datasheet Summary
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Advanced Technical Information
CoolMOS Power MOSFET
IXKN 40N60C
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET
VDSS 600 V
ID25 40 A
RDS(on) 70 mW
Symbol VDSS VGS ID25 ID90 EAR EAS dv/dt PD TJ TJM Tstg VISOL Md
Conditions TJ = 25°C to 150°C
Maximum Ratings 600 ±20 V V miniBLOC, SOT-227 B E72873
TC = 25°C TC = 90°C ID = 20 A, L = 5 µH, TVJ = 25°C, repetitive ID = 10 A, L = 36 mH, TVJ = 25°C, non repetitive VDS £ VDSS, IS = 47 A, diS/dt = 100 A/µs, TJ = TJM TC = 25°C
40 27 1 1.8 6 290 -40 ... +150 150 -40 ... +150
A A mJ J
V/ns W °C °C °C V~
G = Gate S = Source
D = Drain
Either source terminal at miniBLOC can be used as main or kelvin...